A compact model for flicker noise in MOSFETs considering both correlated mobility and carrier number fluctuations

In this work, a consistent, physics-based, one-equation-all-regions model for flicker noise in MOS transistors that considers both mobility and carrier number fluctuations is presented. The final result resembles the known BSIM flicker noise model, but some inconsistencies are avoided because approximations and interpolation are not necessary. Exact noise integration along the channel was possible with the aid of a one-equation-all-regions dc model of the MOS transistor. Finally a brief discussion based on SPICE noise simulations and some noise measurements is presented, about which of the terms of the new model are necessary for the designer, that require accurate but simple equations for the design space exploration.