A complete compact model for flicker noise in MOS transistors

Alfredo Arnaud; Alain Hoffmann

doi:10.1109/LASCAS.2015.7250496

A complete compact model for flicker noise in MOS transistors

Alfredo Arnaud
, Alain Hoffmann

Department of Engineering

Université Montpellier 2

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

In this work, a consistent, physics-based, one-equation-all-regions model for flicker noise in MOS transistors that consider both mobility and carrier number fluctuations is presented. The final result resembles the known BSIM flicker noise model but some inconsistencies are avoided because approximations and interpolation are not necessary. A exact noise integration along the channel was possible with the aid of a one-equation-all-regions dc model of the MOS transistor. Finally, a brief discussion is presented about which of the terms of the new model are necessary for the designer, that require accurate but simple equations for the design space exploration.

Original language	English
Title of host publication	2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings
Editors	Alfredo Arnaud, Fernando Silveira, Lorena Garcia
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479983322
DOIs	https://doi.org/10.1109/LASCAS.2015.7250496
State	Published - 9 Sep 2015
Event	6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015 - Montevideo, Uruguay Duration: 24 Feb 2015 → 27 Feb 2015

Publication series

Name	2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings

Conference

Conference	6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015
Country/Territory	Uruguay
City	Montevideo
Period	24/02/15 → 27/02/15

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10.1109/LASCAS.2015.7250496

Cite this

Arnaud, A., & Hoffmann, A. (2015). A complete compact model for flicker noise in MOS transistors. In A. Arnaud, F. Silveira, & L. Garcia (Eds.), 2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings Article 7250496 (2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS.2015.7250496

Arnaud, Alfredo ; Hoffmann, Alain. / A complete compact model for flicker noise in MOS transistors. 2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings. editor / Alfredo Arnaud ; Fernando Silveira ; Lorena Garcia. Institute of Electrical and Electronics Engineers Inc., 2015. (2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings).

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title = "A complete compact model for flicker noise in MOS transistors",

abstract = "In this work, a consistent, physics-based, one-equation-all-regions model for flicker noise in MOS transistors that consider both mobility and carrier number fluctuations is presented. The final result resembles the known BSIM flicker noise model but some inconsistencies are avoided because approximations and interpolation are not necessary. A exact noise integration along the channel was possible with the aid of a one-equation-all-regions dc model of the MOS transistor. Finally, a brief discussion is presented about which of the terms of the new model are necessary for the designer, that require accurate but simple equations for the design space exploration.",

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Arnaud, A & Hoffmann, A 2015, A complete compact model for flicker noise in MOS transistors. in A Arnaud, F Silveira & L Garcia (eds), 2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings., 7250496, 2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings, Institute of Electrical and Electronics Engineers Inc., 6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015, Montevideo, Uruguay, 24/02/15. https://doi.org/10.1109/LASCAS.2015.7250496

A complete compact model for flicker noise in MOS transistors. / Arnaud, Alfredo; Hoffmann, Alain.
2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings. ed. / Alfredo Arnaud; Fernando Silveira; Lorena Garcia. Institute of Electrical and Electronics Engineers Inc., 2015. 7250496 (2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this work, a consistent, physics-based, one-equation-all-regions model for flicker noise in MOS transistors that consider both mobility and carrier number fluctuations is presented. The final result resembles the known BSIM flicker noise model but some inconsistencies are avoided because approximations and interpolation are not necessary. A exact noise integration along the channel was possible with the aid of a one-equation-all-regions dc model of the MOS transistor. Finally, a brief discussion is presented about which of the terms of the new model are necessary for the designer, that require accurate but simple equations for the design space exploration.

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Arnaud A, Hoffmann A. A complete compact model for flicker noise in MOS transistors. In Arnaud A, Silveira F, Garcia L, editors, 2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings. Institute of Electrical and Electronics Engineers Inc. 2015. 7250496. (2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings). doi: 10.1109/LASCAS.2015.7250496

A complete compact model for flicker noise in MOS transistors

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