@inproceedings{d791e5898c9b43f192dc2aa993c69e60,
title = "A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor",
abstract = "In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5\mu \mathrm{m} CMOS technology, and a 100nA current reference in a 0.18\mu \mathrm{m} CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.",
keywords = "ABM, Current Mirror, Low Power, PVT variations, Self-biased Current Source",
author = "Diego Costa and Matias Miguez and Joel Gak and Fabian Torres and Alfredo Arnaud",
note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Argentine Conference on Electronics, CAE 2020 ; Conference date: 27-02-2020 Through 28-02-2020",
year = "2020",
month = feb,
doi = "10.1109/CAE48787.2020.9046366",
language = "Ingl{\'e}s",
series = "2020 Argentine Conference on Electronics, CAE 2020",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "82--86",
editor = "Pedro Julian and Andreou, {Andreas G.}",
booktitle = "2020 Argentine Conference on Electronics, CAE 2020",
}