Abstract
This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.
| Original language | English |
|---|---|
| Pages (from-to) | 63-68 |
| Number of pages | 6 |
| Journal | Journal of Integrated Circuits and Systems |
| Volume | 3 |
| Issue number | 2 |
| State | Published - 2008 |
Keywords
- Flicker noise switched biased MOS