@inproceedings{78e45ae840a0454382dad32107329c29,
title = "A study of flicker noise in MOS transistor under switched bias condition",
abstract = "This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental measurements. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations; this behavior is not correctly addressed by previously reported noise models of switched MOSFET.",
author = "Mat{\'i}as Miguez and Alfredo Arnaud",
year = "2007",
doi = "10.1149/1.2766902",
language = "Ingl{\'e}s",
isbn = "9781566775656",
series = "ECS Transactions",
number = "1",
pages = "313--322",
booktitle = "ECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007",
edition = "1",
note = "22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 ; Conference date: 03-09-2007 Through 06-09-2007",
}