A study of flicker noise in MOS transistor under switched bias condition

Matías Miguez; Alfredo Arnaud

A study of flicker noise in MOS transistor under switched bias condition

Department of Engineering

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.

Original language	English
Pages (from-to)	63-68
Number of pages	6
Journal	Journal of Integrated Circuits and Systems
Volume	3
Issue number	2
State	Published - 2008

Keywords

Flicker noise switched biased MOS

Cite this

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title = "A study of flicker noise in MOS transistor under switched bias condition",

abstract = "This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.",

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T1 - A study of flicker noise in MOS transistor under switched bias condition

AU - Miguez, Matías

AU - Arnaud, Alfredo

PY - 2008

Y1 - 2008

N2 - This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.

AB - This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.

KW - Flicker noise switched biased MOS

UR - https://www.scopus.com/pages/publications/56849128969

M3 - Artículo

AN - SCOPUS:56849128969

SN - 1807-1953

VL - 3

SP - 63

EP - 68

JO - Journal of Integrated Circuits and Systems

JF - Journal of Integrated Circuits and Systems

IS - 2

ER -

A study of flicker noise in MOS transistor under switched bias condition

Abstract

Keywords

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