An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

Alfredo Arnaud; Rafael Puyol; Alfonso Chacon-Rodriguez; Matias Miguez; Joel Gak

doi:10.1109/LASCAS.2019.8667576

An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

Alfredo Arnaud, Rafael Puyol, Alfonso Chacon-Rodriguez, Matias Miguez, Joel Gak

Department of Engineering

Universidad Católica del Uruguay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.

Original language	English
Title of host publication	2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	49-52
Number of pages	4
ISBN (Electronic)	9781728104522
DOIs	https://doi.org/10.1109/LASCAS.2019.8667576
State	Published - 14 Mar 2019
Event	10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019 - Armenia, Colombia Duration: 24 Feb 2019 → 27 Feb 2019

Publication series

Name	2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings

Conference

Conference	10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019
Country/Territory	Colombia
City	Armenia
Period	24/02/19 → 27/02/19

Keywords

CMOS
MOS resistor.
analog filters
analog integrated circuits
linearization techniques

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10.1109/LASCAS.2019.8667576

Cite this

Arnaud, A., Puyol, R., Chacon-Rodriguez, A., Miguez, M., & Gak, J. (2019). An asymmetrical bulk-modified composite MOS transistor with enhanced linearity. In 2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings (pp. 49-52). Article 8667576 (2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/LASCAS.2019.8667576

Arnaud, Alfredo ; Puyol, Rafael ; Chacon-Rodriguez, Alfonso et al. / An asymmetrical bulk-modified composite MOS transistor with enhanced linearity. 2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. pp. 49-52 (2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings).

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abstract = "In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.",

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author = "Alfredo Arnaud and Rafael Puyol and Alfonso Chacon-Rodriguez and Matias Miguez and Joel Gak",

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Arnaud, A, Puyol, R, Chacon-Rodriguez, A, Miguez, M & Gak, J 2019, An asymmetrical bulk-modified composite MOS transistor with enhanced linearity. in 2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings., 8667576, 2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 49-52, 10th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2019, Armenia, Colombia, 24/02/19. https://doi.org/10.1109/LASCAS.2019.8667576

An asymmetrical bulk-modified composite MOS transistor with enhanced linearity. / Arnaud, Alfredo; Puyol, Rafael; Chacon-Rodriguez, Alfonso et al.
2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. p. 49-52 8667576 (2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AB - In this work, an asymmetrical bulk-linearized composite MOSFET is presented, with an enhanced linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion, allowing to implement large MOS resistors. Some preliminary measurements are presented, as well as 150MΩ and 200MΩ equivalent resistors simulations, with a linear range up to 1.5V. A low frequency, 40dB gain, fully integrated cardiac sensing channel filter/amplifier is also shown. Taking advantage of the proposed technique, the circuit consumes only 25nA of supply current.

KW - CMOS

KW - MOS resistor.

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KW - analog integrated circuits

KW - linearization techniques

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Arnaud A, Puyol R, Chacon-Rodriguez A, Miguez M , Gak J. An asymmetrical bulk-modified composite MOS transistor with enhanced linearity. In 2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. p. 49-52. 8667576. (2019 IEEE 10th Latin American Symposium on Circuits and Systems, LASCAS 2019 - Proceedings). doi: 10.1109/LASCAS.2019.8667576

An asymmetrical bulk-modified composite MOS transistor with enhanced linearity

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