An Integrated 350V Dimmer

Fabian Torres; Joel Gak; Alfredo Arnaud; Matias Miguez

doi:10.1109/CAE48787.2020.9046362

An Integrated 350V Dimmer

Fabian Torres, Joel Gak, Alfredo Arnaud, Matias Miguez

Department of Engineering

Universidad Católica del Uruguay

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm² without pads.

Original language	English
Title of host publication	2020 Argentine Conference on Electronics, CAE 2020
Editors	Pedro Julian, Andreas G. Andreou
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	93-98
Number of pages	6
ISBN (Electronic)	9781728161952
DOIs	https://doi.org/10.1109/CAE48787.2020.9046362
State	Published - Feb 2020
Event	2020 Argentine Conference on Electronics, CAE 2020 - Buenos Aires, Argentina Duration: 27 Feb 2020 → 28 Feb 2020

Publication series

Name	2020 Argentine Conference on Electronics, CAE 2020

Conference

Conference	2020 Argentine Conference on Electronics, CAE 2020
Country/Territory	Argentina
City	Buenos Aires
Period	27/02/20 → 28/02/20

Keywords

dimmer
integrated circuits
low power
ultra high voltage

Access to Document

10.1109/CAE48787.2020.9046362

Cite this

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title = "An Integrated 350V Dimmer",

abstract = "The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.",

keywords = "dimmer, integrated circuits, low power, ultra high voltage",

author = "Fabian Torres and Joel Gak and Alfredo Arnaud and Matias Miguez",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 Argentine Conference on Electronics, CAE 2020 ; Conference date: 27-02-2020 Through 28-02-2020",

year = "2020",

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doi = "10.1109/CAE48787.2020.9046362",

language = "Ingl{\'e}s",

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booktitle = "2020 Argentine Conference on Electronics, CAE 2020",

}

Torres, F, Gak, J , Arnaud, A & Miguez, M 2020, An Integrated 350V Dimmer. in P Julian & AG Andreou (eds), 2020 Argentine Conference on Electronics, CAE 2020., 9046362, 2020 Argentine Conference on Electronics, CAE 2020, Institute of Electrical and Electronics Engineers Inc., pp. 93-98, 2020 Argentine Conference on Electronics, CAE 2020, Buenos Aires, Argentina, 27/02/20. https://doi.org/10.1109/CAE48787.2020.9046362

An Integrated 350V Dimmer. / Torres, Fabian; Gak, Joel ; Arnaud, Alfredo et al.
2020 Argentine Conference on Electronics, CAE 2020. ed. / Pedro Julian; Andreas G. Andreou. Institute of Electrical and Electronics Engineers Inc., 2020. p. 93-98 9046362 (2020 Argentine Conference on Electronics, CAE 2020).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Arnaud, Alfredo

AU - Miguez, Matias

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N2 - The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.

AB - The design of an almost fully integrated phase-cut dimmer is presented. The circuit was designed on a 1um ultra high voltage (UHV) MOS technology in a silicon-on-insulator (SOI) wafer. The dimmer can operate with a duty cycle of up to 95% power (80%) and a load of up to 100 W which is adequate for modern domestic dimmable LED lights. The total occupied silicon area is 6.5 mm2 without pads.

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KW - integrated circuits

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DO - 10.1109/CAE48787.2020.9046362

M3 - Contribución a la conferencia

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BT - 2020 Argentine Conference on Electronics, CAE 2020

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 Argentine Conference on Electronics, CAE 2020

Y2 - 27 February 2020 through 28 February 2020

ER -

An Integrated 350V Dimmer

Abstract

Publication series

Conference

Keywords

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