Bulk linearisation of the MOS resistor

A. Arnaud; M. Miguez

doi:10.1049/el.2018.5482

Bulk linearisation of the MOS resistor

A. Arnaud, M. Miguez

Department of Engineering

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

A bulk-linearised composite MOSFET is presented, with an extended linear range and an equivalent saturation voltage of up to several hundred mV even in weak inversion. Some preliminary measurements are presented as well as a 300 MO equivalent resistor, with almost a 1 V quasi-linear range. A low frequency, 28 dB gain, biomedical bandpass filter/amplifier is also shown, taking advantage of the linearised MOSFETs to consume only 16 nA of supply current.

Original language	English
Pages (from-to)	1106-1108
Number of pages	3
Journal	Electronics Letters
Volume	54
Issue number	19
DOIs	https://doi.org/10.1049/el.2018.5482
State	Published - 20 Sep 2018

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Bulk linearisation of the MOS resistor

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