@inproceedings{e1b385e9d2fd4417b65ebb3b918e1293,
title = "Characterization of MOS transistor current mismatch",
abstract = "Electron device matching has been a key factor on the performance of today's analog or even digital electronic circuits. This paper presents a study of drain current matching in MOS transistors. CMOS test structures were designed and fabricated as a way to develop an extensive experimental work, where current mismatch was measured under a wide range of bias conditions. A model for MOS transistor mismatch was also developed, using the carrier number fluctuation theory to account for the effects of local doping fluctuations. This model shows a good fitting with measurements over a wide range of operation conditions, from weak to strong inversion, from linear to saturation region, and allows the assessment of mismatch from process and geometric parameters.",
keywords = "Analog design, Compact models, MOSFET, Matching, Mismatch",
author = "H. Klimach and A. Arnaud and Schneider, \{M. C.\} and C. Galup-Montoro",
year = "2004",
doi = "10.1145/1016568.1016585",
language = "Ingl{\'e}s",
isbn = "1581139470",
series = "Proceedings - 17th Symposium on Integrated Cicuits and Systems Design, SBCCI2004",
publisher = "Association for Computing Machinery (ACM)",
pages = "33--38",
booktitle = "Proceedings - 17th Symposium on Integrated Cicuits and Systems Design, SBCCI2004",
note = "Proceedings - 17th Symposium on Integrated Cicuits and Systems Design, SBCCI2004 ; Conference date: 07-09-2004 Through 11-09-2004",
}