Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

H. Klimach, A. Arnaud, M. C. Schneider, C. Galup-Montoro

Research output: Contribution to journalConference articlepeer-review

9 Scopus citations

Abstract

This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.

Original languageEnglish
Pages (from-to)V-113-V-116
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume5
StatePublished - 2004
Externally publishedYes
Event2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC, Canada
Duration: 23 May 200426 May 2004

Keywords

  • Analog design
  • Compact models
  • MOSFET
  • Matching

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