TY - JOUR
T1 - Generalized eigenvalue problem criteria for multiband-coupled systems
T2 - Hole mixing phenomenon study
AU - Mendoza-Álvarez, A.
AU - Flores-Godoy, J. J.
AU - Fernndez-Anaya, G.
AU - Diago-Cisneros, L.
PY - 2011/11
Y1 - 2011/11
N2 - Non-linear eigenvalue equations straightforwardly determine fundamental physical quantities of a wide variety of areas. We retrieve a root-locus-like procedure, as a new technique for directly analyzing specific physical phenomena involving multiband-multichannel charge-carrier coupled modes. A new explicit necessary and sufficient condition is presented for a generalized eigenvalue problem, associated with an N-coupled components matrix boundary equation. Within our approach, the uncoupled-system case is nicely recovered. We tested the present scheme by applying it to heavy and light holes, described via the Kohn-Lüttinger model, and found good agreement for our proposition even at medium-intensity band mixing. We simulated the multiband-hole band-mixing-phenomenon by monitoring the root-locus for the quadratic eigenvalue problem, and by plotting the metamorphosis of the effective band offset profile, for bulk and layered heterostructures, respectively. Several new features have been observed; for example, for light holes solely, an appealing interchange of quantum-well-like versus barrier-like roles has been detected for several III-V semiconductor binary compounds.
AB - Non-linear eigenvalue equations straightforwardly determine fundamental physical quantities of a wide variety of areas. We retrieve a root-locus-like procedure, as a new technique for directly analyzing specific physical phenomena involving multiband-multichannel charge-carrier coupled modes. A new explicit necessary and sufficient condition is presented for a generalized eigenvalue problem, associated with an N-coupled components matrix boundary equation. Within our approach, the uncoupled-system case is nicely recovered. We tested the present scheme by applying it to heavy and light holes, described via the Kohn-Lüttinger model, and found good agreement for our proposition even at medium-intensity band mixing. We simulated the multiband-hole band-mixing-phenomenon by monitoring the root-locus for the quadratic eigenvalue problem, and by plotting the metamorphosis of the effective band offset profile, for bulk and layered heterostructures, respectively. Several new features have been observed; for example, for light holes solely, an appealing interchange of quantum-well-like versus barrier-like roles has been detected for several III-V semiconductor binary compounds.
UR - http://www.scopus.com/inward/record.url?scp=80755143554&partnerID=8YFLogxK
U2 - 10.1088/0031-8949/84/05/055702
DO - 10.1088/0031-8949/84/05/055702
M3 - Artículo
AN - SCOPUS:80755143554
SN - 0031-8949
VL - 84
JO - Physica Scripta
JF - Physica Scripta
IS - 5
M1 - 055702
ER -