Measurements of the 12 nA low frequency oscillator

Pablo O. Cayuela, Alfredo Arnaud

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In this work, measurements of the two versions of the 12 nA Low Frequency Oscillator is presented. The circuit designed in a standard 0.6 μm MOS technology with most of the transistors operating in weak inversion, includes self-bias current and voltage references, and can be powered with a wide range supply voltage from 1.2 to 5.0 V. The oscillator is intended as part of the next generation of portable or autonomous devices, powered by microbatteries or energy harvesting systems.

Original languageEnglish
Title of host publicationProceedings of the 2015 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2015
EditorsAndreas G. Andreou, Pedro Julian
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages22-27
Number of pages6
ISBN (Electronic)9781479980178
DOIs
StatePublished - 2 Sep 2015
Event10th Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2015 - Villa Maria, Cordoba, Argentina
Duration: 30 Jul 201531 Jul 2015

Publication series

NameProceedings of the 2015 Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2015

Conference

Conference10th Argentine School of Micro-Nanoelectronics, Technology and Applications, EAMTA 2015
Country/TerritoryArgentina
CityVilla Maria, Cordoba
Period30/07/1531/07/15

Keywords

  • Analog Circuit Design
  • MOS transistor
  • Oscillator
  • Ultra Low Power Circuits
  • Weak Inversion

Fingerprint

Dive into the research topics of 'Measurements of the 12 nA low frequency oscillator'. Together they form a unique fingerprint.

Cite this