MOSFET mismatch modeling: A new approach

Hamilton Klimach; Carlos Galup-Montoro; Márcio C. Schneider; Alfredo Arnaud

doi:10.1109/MDT.2006.20

MOSFET mismatch modeling: A new approach

Hamilton Klimach, Carlos Galup-Montoro, Márcio C. Schneider, Alfredo Arnaud

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

Handling component mismatch represents a great challenge in analog and even digital design for current and future submicron technologies. This article, a special selection from the Symposium on Integrated Circuits and Systems Design (SBCCI), presents a matching model to help designers account for real effects while maintaining simplicity and easing the design effort.

Original language	English
Pages (from-to)	20-29
Number of pages	10
Journal	IEEE Design and Test of Computers
Volume	23
Issue number	1
DOIs	https://doi.org/10.1109/MDT.2006.20
State	Published - Jan 2006
Externally published	Yes

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10.1109/MDT.2006.20

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title = "MOSFET mismatch modeling: A new approach",

abstract = "Handling component mismatch represents a great challenge in analog and even digital design for current and future submicron technologies. This article, a special selection from the Symposium on Integrated Circuits and Systems Design (SBCCI), presents a matching model to help designers account for real effects while maintaining simplicity and easing the design effort.",

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AB - Handling component mismatch represents a great challenge in analog and even digital design for current and future submicron technologies. This article, a special selection from the Symposium on Integrated Circuits and Systems Design (SBCCI), presents a matching model to help designers account for real effects while maintaining simplicity and easing the design effort.

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MOSFET mismatch modeling: A new approach

Abstract

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