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Simple noise formulas for MOS analog design

  • Universidad de la República
  • Federal University of Santa Catarina

Research output: Contribution to journal › Conference article › peer-review

4 Scopus citations

Abstract

The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (fc) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8μm technology.

Original languageEnglish
Pages (from-to)I189-I192
JournalProceedings - IEEE International Symposium on Circuits and Systems
Volume1
StatePublished - 2003
Externally publishedYes
EventProceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok, Thailand
Duration: 25 May 2003 → 28 May 2003

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