Valence-band effective-potential evolution for coupled holes

J. J. Flores-Godoy, A. Mendoza-Álvarez, L. Diago-Cisneros, G. Fernández-Anaya

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure is directly applied to an eigenvalue quadratic problem obtained from a multichannel system of coupled modes, in the context of the multiband effective mass approximation. By letting grow valence-band mixing, it is shown that the standard fixed-height rectangular potential energy for the scatterer distribution is a reliable test-run input for heavy holes. On the contrary, this scheme is no longer valid for light holes and a mutable effective band offset profile has to be considered instead whenever the in-plane kinetic energy changes.

Original languageEnglish
Pages (from-to)1339-1344
Number of pages6
JournalPhysica Status Solidi (B) Basic Research
Volume250
Issue number7
DOIs
StatePublished - Jul 2013
Externally publishedYes

Keywords

  • Electronic states
  • Electronic transport
  • Heterostructures
  • III-V semiconductors

Fingerprint

Dive into the research topics of 'Valence-band effective-potential evolution for coupled holes'. Together they form a unique fingerprint.

Cite this