Abstract
We present the metamorphosis in the effective-potential profile of layered heterostructures, for several III-V semiconductor binary compounds, when the band mixing of light and heavy holes increases. A root-locus-like procedure is directly applied to an eigenvalue quadratic problem obtained from a multichannel system of coupled modes, in the context of the multiband effective mass approximation. By letting grow valence-band mixing, it is shown that the standard fixed-height rectangular potential energy for the scatterer distribution is a reliable test-run input for heavy holes. On the contrary, this scheme is no longer valid for light holes and a mutable effective band offset profile has to be considered instead whenever the in-plane kinetic energy changes.
Original language | English |
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Pages (from-to) | 1339-1344 |
Number of pages | 6 |
Journal | Physica Status Solidi (B) Basic Research |
Volume | 250 |
Issue number | 7 |
DOIs | |
State | Published - Jul 2013 |
Externally published | Yes |
Keywords
- Electronic states
- Electronic transport
- Heterostructures
- III-V semiconductors