A compact model of MOSFET mismatch for circuit design

Carlos Galup-Montoro, Márcio C. Schneider, Hamilton Klimach, Alfredo Arnaud

Producción científica: Contribución a una revistaArtículorevisión exhaustiva

46 Citas (Scopus)

Resumen

This paper presents a compact model for MOS transistor mismatch. The mismatch model uses the carrier number fluctuation theory to account for the effects of local doping fluctuations along with an accurate and compact de MOSFET model. The resulting matching model is valid for any operation condition, from weak to strong inversion, from the linear to the saturation region, and allows the assessment of mismatch from process and geometric parameters. Experimental results from a set of transistors integrated on a 0.35 μm technology confirm the accuracy of our mismatch model under various bias conditions.

Idioma originalInglés
Páginas (desde-hasta)1649-1657
Número de páginas9
PublicaciónIEEE Journal of Solid-State Circuits
Volumen40
N.º8
DOI
EstadoPublicada - ago. 2005

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