A complete compact model for flicker noise in MOS transistors

Alfredo Arnaud, Alain Hoffmann

Producción científica: Capítulo del libro/informe/acta de congresoContribución a la conferenciarevisión exhaustiva

1 Cita (Scopus)

Resumen

In this work, a consistent, physics-based, one-equation-all-regions model for flicker noise in MOS transistors that consider both mobility and carrier number fluctuations is presented. The final result resembles the known BSIM flicker noise model but some inconsistencies are avoided because approximations and interpolation are not necessary. A exact noise integration along the channel was possible with the aid of a one-equation-all-regions dc model of the MOS transistor. Finally, a brief discussion is presented about which of the terms of the new model are necessary for the designer, that require accurate but simple equations for the design space exploration.

Idioma originalInglés
Título de la publicación alojada2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings
EditoresAlfredo Arnaud, Fernando Silveira, Lorena Garcia
EditorialInstitute of Electrical and Electronics Engineers Inc.
ISBN (versión digital)9781479983322
DOI
EstadoPublicada - 9 set. 2015
Evento6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015 - Montevideo
Duración: 24 feb. 201527 feb. 2015

Serie de la publicación

Nombre2015 IEEE 6th Latin American Symposium on Circuits and Systems, LASCAS 2015 - Conference Proceedings

Conferencia

Conferencia6th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2015
País/TerritorioUruguay
CiudadMontevideo
Período24/02/1527/02/15

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