A Self-biased Current Source, using an Asymmetric Bulk-modified MOS Composite Transistor

Diego Costa, Matias Miguez, Joel Gak, Fabian Torres, Alfredo Arnaud

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Resumen

In this work a new topology for a self-biased current reference, based on an asymmetric bulk-modified MOS (ABM) composite transistor is presented. Two current references based in this technique were designed: a 13.5nA current reference in a 1.5\mu \mathrm{m} CMOS technology, and a 100nA current reference in a 0.18\mu \mathrm{m} CMOS technology. The latter was designed to minimize the temperature dependence of the output current; the result was less than 5% from 0°C to 100°C, which is a very good result in comparison to other reported similar current references.

Idioma originalInglés
Título de la publicación alojada2020 Argentine Conference on Electronics, CAE 2020
EditoresPedro Julian, Andreas G. Andreou
EditorialInstitute of Electrical and Electronics Engineers Inc.
Páginas82-86
Número de páginas5
ISBN (versión digital)9781728161952
DOI
EstadoPublicada - feb. 2020
Evento2020 Argentine Conference on Electronics, CAE 2020 - Buenos Aires
Duración: 27 feb. 202028 feb. 2020

Serie de la publicación

Nombre2020 Argentine Conference on Electronics, CAE 2020

Conferencia

Conferencia2020 Argentine Conference on Electronics, CAE 2020
País/TerritorioArgentina
CiudadBuenos Aires
Período27/02/2028/02/20

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