TY - GEN
T1 - A self-protected integrated switch in a HV technology
AU - Miguez, Matías
AU - Arnaud, Alfredo
AU - Gak, Joel
PY - 2009
Y1 - 2009
N2 - An integrated switch to control electrical stimuli in implantable medical devices is presented in this work. First a self-biased protection mechanism to avoid VGS reaching maximum rated value is presented. Then, using a HV-CMOS technology this technique is incorporated in a fully integrated switch, to control 0 to 16V, and 0 to 30 mA, pulses for implantable stimulators. Because of the low supply voltage VCC between 2 to 5V, and safety considerations in implantable devices, special level shifters, drivers, and a voltage multiplier, that drive a large 40000μm/3μm dual PMOS switch, were necessary for the circuit.
AB - An integrated switch to control electrical stimuli in implantable medical devices is presented in this work. First a self-biased protection mechanism to avoid VGS reaching maximum rated value is presented. Then, using a HV-CMOS technology this technique is incorporated in a fully integrated switch, to control 0 to 16V, and 0 to 30 mA, pulses for implantable stimulators. Because of the low supply voltage VCC between 2 to 5V, and safety considerations in implantable devices, special level shifters, drivers, and a voltage multiplier, that drive a large 40000μm/3μm dual PMOS switch, were necessary for the circuit.
KW - Design
KW - Drivers
UR - https://www.scopus.com/pages/publications/70949106710
U2 - 10.1145/1601896.1601910
DO - 10.1145/1601896.1601910
M3 - Contribución a la conferencia
AN - SCOPUS:70949106710
SN - 9781605587059
T3 - Proceedings of the 22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009
BT - Proceedings of the 22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009
T2 - 22nd Symposium on Integrated Circuits and Systems Design, SBCCI 2009
Y2 - 31 August 2009 through 3 September 2009
ER -