Resumen
This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.
Idioma original | Inglés |
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Páginas (desde-hasta) | 63-68 |
Número de páginas | 6 |
Publicación | Journal of Integrated Circuits and Systems |
Volumen | 3 |
N.º | 2 |
Estado | Publicada - 2008 |