A study of flicker noise in MOS transistor under switched bias condition

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Resumen

This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental data. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations.

Idioma originalInglés
Páginas (desde-hasta)63-68
Número de páginas6
PublicaciónJournal of Integrated Circuits and Systems
Volumen3
N.º2
EstadoPublicada - 2008

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