A study of flicker noise in MOS transistor under switched bias condition

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Resumen

This manuscript examines in detail the mechanisms and behavior of flicker noise in switched biased MOS transistors. Firstly, the PSD of a DC biased transistor is deduced using only Shockley-Read-Hall (SRH) statistics and the autocorrelation formalism. Then the analysis is extended, by means of simulations and using simple physical hypotheses, to a switched bias condition. The results allow explaining several reported experimental measurements. Particularly, the 1/f form of flicker noise at very low frequencies is observed in simulations; this behavior is not correctly addressed by previously reported noise models of switched MOSFET.

Idioma originalInglés
Título de la publicación alojadaECS Transactions - 22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
Páginas313-322
Número de páginas10
Edición1
DOI
EstadoPublicada - 2007
Evento22nd Symposium on Microelectronics Technology and Devices, SBMicro2007 - Rio de Janeiro
Duración: 3 set. 20076 set. 2007

Serie de la publicación

NombreECS Transactions
Número1
Volumen9
ISSN (versión impresa)1938-5862
ISSN (versión digital)1938-6737

Conferencia

Conferencia22nd Symposium on Microelectronics Technology and Devices, SBMicro2007
País/TerritorioBrazil
CiudadRio de Janeiro
Período3/09/076/09/07

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