Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET

E. L.R. Da Silva; Matías Rafael Miguez de Mori; M. De Souza; Alfredo Arnaud Maceira; M. A. Pavanello

doi:10.1149/1.3474180

Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET

E. L.R. Da Silva, Matías Rafael Miguez de Mori, M. De Souza, Alfredo Arnaud Maceira, M. A. Pavanello

Centro Universitário da FEI

Producción científica: Contribución a una revista › Artículo › revisión exhaustiva

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Resumen

In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.

Idioma original	Inglés
Páginas (desde-hasta)	359-366
Número de páginas	8
Publicación	ECS Transactions
Volumen	31
N.º	1
DOI	https://doi.org/10.1149/1.3474180
Estado	Publicada - 2010

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@article{44d420dcffee4d18acffecff2e93b265,

title = "Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET",

abstract = "In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.",

author = "\{Da Silva\}, \{E. L.R.\} and \{Miguez de Mori\}, \{Mat{\'i}as Rafael\} and \{De Souza\}, M. and \{Arnaud Maceira\}, Alfredo and Pavanello, \{M. A.\}",

year = "2010",

doi = "10.1149/1.3474180",

language = "Ingl{\'e}s",

volume = "31",

pages = "359--366",

journal = "ECS Transactions",

issn = "1938-5862",

number = "1",

}

TY - JOUR

T1 - Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET

AU - Da Silva, E. L.R.

AU - Miguez de Mori, Matías Rafael

AU - De Souza, M.

AU - Arnaud Maceira, Alfredo

AU - Pavanello, M. A.

PY - 2010

Y1 - 2010

N2 - In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.

AB - In this paper a comparison between the low-frequency noise in graded-channel SOI nMOSFETs (GC SOI MOSFET) and standard fully depleted (FD) SOI nMOSFETs will be presented. The evolution of noise with bias and frequency, mainly in the GC SOI MOSFETs, will be demonstrated. Numerical bidimensional simulations are used to reproduce the same tendencies observed experimentally in order to allow for a physical insight on the noise in GC SOI transistors.

UR - https://www.scopus.com/pages/publications/79952475098

U2 - 10.1149/1.3474180

DO - 10.1149/1.3474180

M3 - Artículo

AN - SCOPUS:79952475098

SN - 1938-5862

VL - 31

SP - 359

EP - 366

JO - ECS Transactions

JF - ECS Transactions

IS - 1

ER -

Analysis of the low-frequency noise in graded-channel and standard SOI nMOSFET

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