Resumen
This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.
Idioma original | Inglés |
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Páginas (desde-hasta) | V-113-V-116 |
Publicación | Proceedings - IEEE International Symposium on Circuits and Systems |
Volumen | 5 |
Estado | Publicada - 2004 |
Publicado de forma externa | Sí |
Evento | 2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC Duración: 23 may. 2004 → 26 may. 2004 |