Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

H. Klimach; A. Arnaud; M. C. Schneider; C. Galup-Montoro

Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

H. Klimach, A. Arnaud, M. C. Schneider, C. Galup-Montoro

Producción científica: Contribución a una revista › Artículo de la conferencia › revisión exhaustiva

9 Citas (Scopus)

Resumen

This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.

Idioma original	Inglés
Páginas (desde-hasta)	V-113-V-116
Publicación	Proceedings - IEEE International Symposium on Circuits and Systems
Volumen	5
Estado	Publicada - 2004
Publicado de forma externa	Sí
Evento	2004 IEEE International Symposium on Cirquits and Systems - Proceedings - Vancouver, BC Duración: 23 may. 2004 → 26 may. 2004

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title = "Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory",

abstract = "This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.",

keywords = "Analog design, Compact models, MOSFET, Matching",

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journal = "Proceedings - IEEE International Symposium on Circuits and Systems",

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note = "2004 IEEE International Symposium on Cirquits and Systems - Proceedings ; Conference date: 23-05-2004 Through 26-05-2004",

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TY - JOUR

T1 - Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

AU - Klimach, H.

AU - Arnaud, A.

AU - Schneider, M. C.

AU - Galup-Montoro, C.

PY - 2004

Y1 - 2004

N2 - This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.

AB - This paper presents a new approach for accurate MOS transistor matching calculation. Our model, which is based on an accurate physics-based MOSFET model, allows the assessment of mismatch from process parameters and is valid for any operating region. Experimental results taken on a test set of transistors implemented in a 1.2 μm CMOS technology corroborate the theoretical development of this work.

KW - Analog design

KW - Compact models

KW - MOSFET

KW - Matching

UR - https://www.scopus.com/pages/publications/4344664589

M3 - Artículo de la conferencia

AN - SCOPUS:4344664589

SN - 0271-4310

VL - 5

SP - V-113-V-116

JO - Proceedings - IEEE International Symposium on Circuits and Systems

JF - Proceedings - IEEE International Symposium on Circuits and Systems

T2 - 2004 IEEE International Symposium on Cirquits and Systems - Proceedings

Y2 - 23 May 2004 through 26 May 2004

ER -

Consistent model for drain current mismatch in MOSFETs using the carrier number fluctuation theory

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