TY - JOUR
T1 - Consistent noise models for analysis and design of CMOS circuits
AU - Arnaud, Alfredo
AU - Galup-Montoro, Carlos
PY - 2004/10
Y1 - 2004/10
N2 - Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.
AB - Simple, physics-based MOSFET noise models, valid over the linear, saturation, and subthreshold operation regions are presented. The consistency of the models representing series-parallel associations of transistors is verified. Simple formulas for hand analysis using the inversion level concept are developed. The proportionality between the flicker noise corner frequency and the transistor transition frequency is proved and experimentally verified under wide bias conditions. Application of the noise models to a low-noise design is shown.
UR - http://www.scopus.com/inward/record.url?scp=7444262094&partnerID=8YFLogxK
U2 - 10.1109/TCSI.2004.835028
DO - 10.1109/TCSI.2004.835028
M3 - Artículo
AN - SCOPUS:7444262094
SN - 1057-7122
VL - 51
SP - 1909
EP - 1915
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 10
ER -