TY - GEN
T1 - SiC CMOS Gate Driver for High-Temperature Aerospace Applications
AU - Torres, Felipe
AU - Martínez, Andrés
AU - Marín, Jorge
AU - Rojas, Christian A.
AU - Gak, Joel
AU - Rommel, Mathias
AU - Wilson-Veas, Alan H.
AU - May, Alexander
AU - Schraml, Michael
AU - Calarco, Nicolás
AU - Miguez, Matías
N1 - Publisher Copyright:
© 2024 IEEE.
PY - 2024/3/7
Y1 - 2024/3/7
N2 - In this study, the exploration of Fraunhofer IISB's 2 μrn 4H-silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented, with a focus on its application in a gate driver for operating power transistors in power converters. The paper concentrates on the thermal characteristics of the gate driver under various temperatures, a vital aspect for satellite power systems. Simulation results detail the gate driver's turn-on and turn-off timings, along with propagation delays at different temperatures. Specifically, at 295°C and 1 pF capacitive load, the maximum turn-on and turn-off times were found to be 29 ns and 15 ns respectively, while the maximum propagation delays for turn-on and turn-off were 89 ns and 145 ns. These findings are essential for assessing the gate driver's effectiveness and reliability in space environments. This research underline the efficacy of SiC technology for space applications, offering superior thermal management and radiation resistance.
AB - In this study, the exploration of Fraunhofer IISB's 2 μrn 4H-silicon carbide (SiC) complementary metal-oxide-semiconductor (CMOS) technology is presented, with a focus on its application in a gate driver for operating power transistors in power converters. The paper concentrates on the thermal characteristics of the gate driver under various temperatures, a vital aspect for satellite power systems. Simulation results detail the gate driver's turn-on and turn-off timings, along with propagation delays at different temperatures. Specifically, at 295°C and 1 pF capacitive load, the maximum turn-on and turn-off times were found to be 29 ns and 15 ns respectively, while the maximum propagation delays for turn-on and turn-off were 89 ns and 145 ns. These findings are essential for assessing the gate driver's effectiveness and reliability in space environments. This research underline the efficacy of SiC technology for space applications, offering superior thermal management and radiation resistance.
KW - CMOS analogue integrated circuits
KW - gate drivers
KW - high temperature
KW - satellite power sys-tems
KW - silicon carbide
UR - http://www.scopus.com/inward/record.url?scp=85190614196&partnerID=8YFLogxK
U2 - 10.1109/cae59785.2024.10487149
DO - 10.1109/cae59785.2024.10487149
M3 - Contribución a la conferencia
T3 - Proceedings of the 2024 Argentine Conference on Electronics, CAE 2024 - Congreso Argentino de Electronica 2024, CAE 2024
SP - 99
EP - 102
BT - Proceedings of the 2024 Argentine Conference on Electronics, CAE 2024 - Congreso Argentino de Electronica 2024, CAE 2024
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 6th Argentine Conference on Electronics, CAE 2024
Y2 - 7 March 2024 through 8 March 2024
ER -