Resumen
The designer needs simple and accurate models to estimate noise in MOS transistors as a function of their size, bias point and technology. In this work, we present a simple, continuous, physics-based model for flicker noise. We review also thermal noise and we examine the behavior of the corner frequency (fc) in terms of the bias point. The expressions that are presented are simple and valid in all the operating regions, from weak to strong inversion, constituting a useful set of equations for low noise analog design. Finally we examine the design of two low noise circuit elements, fabricated in a 0.8μm technology.
Idioma original | Inglés |
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Páginas (desde-hasta) | I189-I192 |
Publicación | Proceedings - IEEE International Symposium on Circuits and Systems |
Volumen | 1 |
Estado | Publicada - 2003 |
Publicado de forma externa | Sí |
Evento | Proceedings of the 2003 IEEE International Symposium on Circuits and Systems - Bangkok Duración: 25 may. 2003 → 28 may. 2003 |