TY - JOUR
T1 - Simulating effective potential under strain for holes
AU - Mendoza-Álvareza, A.
AU - Diago-Cisnerosa, L.
AU - Flores-Godoyc, J. J.
AU - Fernández-Anayaa, G.
PY - 2016
Y1 - 2016
N2 - The effective potential (Veff) evolution, is graphically illustrated for an increasing mixing of heavy- and light-holes (lh) under strain. The impact of the present study is enlarged provided we were able to deduce comprehensive analytic expressions for the valence-band offset both for zinc blende and wurtzite semiconductors, useful in current solid-state physics studies, whenever one manages to manipulate the accumulated pseudomorphic strain and mixing effects in a single shoot. We found permutations of Veff character for lh, that retrieve the hypothetically predicted striking "keyboard" effect. Interestingly, the strain diminishes the keyboard profile, and also makes it emerge or vanish occasionally. Due in-plane anisotropy the keyboard effect under pseudomorphic stress turns topologically tuned. We conclude that multiband-mixing and stress-induced events, are strong competitor mechanisms that can not be universally neglected by assuming a fixed-height Veff, as a reliable none-mutable test-run input for layered systems. Our results may be of relevance for promising tunable heterostructure's design to enhance the hole mobility in semiconductor devices.
AB - The effective potential (Veff) evolution, is graphically illustrated for an increasing mixing of heavy- and light-holes (lh) under strain. The impact of the present study is enlarged provided we were able to deduce comprehensive analytic expressions for the valence-band offset both for zinc blende and wurtzite semiconductors, useful in current solid-state physics studies, whenever one manages to manipulate the accumulated pseudomorphic strain and mixing effects in a single shoot. We found permutations of Veff character for lh, that retrieve the hypothetically predicted striking "keyboard" effect. Interestingly, the strain diminishes the keyboard profile, and also makes it emerge or vanish occasionally. Due in-plane anisotropy the keyboard effect under pseudomorphic stress turns topologically tuned. We conclude that multiband-mixing and stress-induced events, are strong competitor mechanisms that can not be universally neglected by assuming a fixed-height Veff, as a reliable none-mutable test-run input for layered systems. Our results may be of relevance for promising tunable heterostructure's design to enhance the hole mobility in semiconductor devices.
KW - Effective scattering potential
KW - Pseudomorphic strain
KW - Valence-band mixing
KW - Valence-band offset
UR - http://www.scopus.com/inward/record.url?scp=84978516934&partnerID=8YFLogxK
M3 - Artículo
AN - SCOPUS:84978516934
SN - 0035-001X
VL - 62
SP - 418
EP - 432
JO - Revista Mexicana de Fisica
JF - Revista Mexicana de Fisica
IS - 5
ER -