TY - GEN
T1 - Stacking Multiple Differential Pairs for a NEF<1 Amplifier aimed at Electroneurographic Signal Recording
AU - Arnaud, Alfredo
AU - Miguez, Matias
N1 - Publisher Copyright:
© 2020 IEEE.
PY - 2020/2
Y1 - 2020/2
N2 - A low-noise, electroneurography (ENG) signal recording micro-power amplifier, for a single-channel implantable medical device, is presented. The amplifier is powered by a standard medical grade 3.7Vnom secondary battery, and stacks twelve differential pairs maximizing current-reuse and operating them close to saturation with a reduced VDS. The amplifier was implemented in a 0.6μm technology, with a total gain of ~80dB, 200Hz-4kHz bandwidth, and a current consumption of just 16.5μA, with a measured input referred noise of 330nVrms in the band of interest. This result corresponds to a Noise Efficiency Factor NEF=0.84, below the classic limit of 1. On the other hand, the die area of the amplifier is 6mm2, because very large input transistors and decoupling capacitors are necessary to reduce flicker noise. Thus finally, chopper technique is proposed to reduce flicker noise without resorting to such huge transistors. A new version of the current-reuse amplifier was designed with ~1/80th gate and capacitor area, and almost the same NEF.
AB - A low-noise, electroneurography (ENG) signal recording micro-power amplifier, for a single-channel implantable medical device, is presented. The amplifier is powered by a standard medical grade 3.7Vnom secondary battery, and stacks twelve differential pairs maximizing current-reuse and operating them close to saturation with a reduced VDS. The amplifier was implemented in a 0.6μm technology, with a total gain of ~80dB, 200Hz-4kHz bandwidth, and a current consumption of just 16.5μA, with a measured input referred noise of 330nVrms in the band of interest. This result corresponds to a Noise Efficiency Factor NEF=0.84, below the classic limit of 1. On the other hand, the die area of the amplifier is 6mm2, because very large input transistors and decoupling capacitors are necessary to reduce flicker noise. Thus finally, chopper technique is proposed to reduce flicker noise without resorting to such huge transistors. A new version of the current-reuse amplifier was designed with ~1/80th gate and capacitor area, and almost the same NEF.
KW - NEF
KW - autozero
KW - chopper
KW - current reuse
KW - low-noise
UR - http://www.scopus.com/inward/record.url?scp=85084310397&partnerID=8YFLogxK
U2 - 10.1109/LASCAS45839.2020.9069024
DO - 10.1109/LASCAS45839.2020.9069024
M3 - Contribución a la conferencia
AN - SCOPUS:85084310397
T3 - 2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020
BT - 2020 IEEE 11th Latin American Symposium on Circuits and Systems, LASCAS 2020
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 11th IEEE Latin American Symposium on Circuits and Systems, LASCAS 2020
Y2 - 25 February 2020 through 28 February 2020
ER -